General Plasma’s revolutionary large area Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is built upon an innovative use of magnets to confine plasma. This novel magnetic confinement method produces a dense, linear plasma making source lengths exceeding 3 meters possible. Many oxide and nitride films are enabled by this technology include: AR’s, TCO’s, solar thin films, barrier coatings and optical films.

Key Features

• High deposition rate - 2-10X sputter and other PECVD rates
• Uniform deposition - +/- 3% across wide substrates
• Protected electrodes - long-term, stable operation
• Low pressure operation - no powder formation, even at high temperatures

Advantages:

• Dense plasma = High deposition rates (1µm-m/min SiO2 deposition rate)
• Uniform plasma = Excellent uniformity
• Low impedance, low pressure discharge = No powder formation
• High flux, low energy ion bombardment = Dense, high quality films

Our processes are constantly refined at our state of the art Thin Film Development Laboratory.